-L L x Consider an infinite silicon bar whose central section extending fro

-L L x Consider an infinite silicon bar whose central section extending from x=-L to x=L is illuminated with light that generates G electron-hole pairs per unit volume per unit time. The semiconductor is uniformly doped with Boron at a level of 1018 cm-3. The intrinsic carrier concentration is 1010 cm-3. There is no electric field inside the semiconductor since it is uniformly doped and there is no battery connected to it.
Problem 1: -L L x Consider an infinite silicon bar whose central section extending from x=-L to x=L is illuminated with light that generates G electron-hole pairs per unit volume per unit time. The semiconductor is uniformly doped with Boron at a level of 1018 cm-3. The intrinsic carrier concentration is 1010 cm-3. There is no electric field inside the semiconductor since it is uniformly doped and there is no battery connected to it. a)If the semiconductor were not uniformly doped could an electric field exist inside the semiconductor at equilibrium? Explain (improper explanation fetches exactly zero credit). b)Explain why the excess minority carrier concentration and its first derivative in space must be continuous everywhere. (Improper explanation = zero credit) c)If the semiconductor is maintained at steady state derive an equation for the
electron concentration as a function of position x everywhere. Use the result of part (b) to solve this part. Problem 2: Consider a non-uniformly doped semiconductor doped with donors. The majority carrier
concentration is approximately equal to the donor concentration at all locations. Apply Poisson222s equation to derive an equation for the intrinsic level profile in the
semiconductor in equilibrium assuming that the semiconductor is non-degenerate. Then
show that near the region where the intrinsic level intersects the Fermi level the intrinsic level profile can be expressed as 02whereDDxxLLiFsDiExAeBeEkTKkTLqnProblem 3: Consider an n-type semiconductor bar that is at steady state but not at equilibrium since a small current is flowing through it. If the carrier concentration varies linearly in space show that the electric field inside the semiconductor obeys the equation 0dnxdxnxdxdx EE